10502

      The 10502 is a high power COMMON BASE bipolar transistor, which is designed for pulsed systems in the frequency band 1030/1090MHz, with the pulse width and duty required for MODE-S&TCAS applications. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. 10502 includes input and output  prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.
      The following is absolute maximum ratings of the 10502. Its device dissipation at 25 and rated output power and pulse conditions is 1458 Watts. Its collector to emitter voltage is 65 Volts. The emitter to base voltage is 3.5 Volts. The collector current is 40 Amps. The storage temperature is -65 to +200. The operating junction temperature is +230.Here are some of electrical characteristics at the test condition of F 1030/1090 MHz, Vcc 50 Volts and PW 32usec, DF 2%. The power output is 500W. The power gain is 8.5dB. The power input is 70W. The collector efficiency is 40%. The return loss is -10dB. The load mismatch tolerance at rated output power and pulse condition is 101 when F is 1090MHz. The emitter to base breakdown is 3.5 Volts when Ie is 50mA. The collector to emitter breakdown is 65 Volts when Ic is 100mA. The DC- current gain is 20 when Tc =5A, Vce =5V. The thermal resistance of 10502 is 0.12/W.