Features: SpecificationsDescription 1013GB122-2DL is a kind of 2-pack-intergrated intelligent power system . Its power section has nine unique features: The first one is SKIIP technology inside. The second one is SPT(soft puch trough) IGBTs. The third one is CAL diode technology. The forth one is ...
1013GB122-2DL: Features: SpecificationsDescription 1013GB122-2DL is a kind of 2-pack-intergrated intelligent power system . Its power section has nine unique features: The first one is SKIIP technology inside. The...
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1013GB122-2DL is a kind of 2-pack-intergrated intelligent power system . Its power section has nine unique features: The first one is SKIIP technology inside. The second one is SPT(soft puch trough) IGBTs. The third one is CAL diode technology. The forth one is intergrated current sensor. The fifth one is intergrated temperature sensor. The sixth one is intergrated heat sink. The seventh one is IEC 60721-3-3(humidity)class 3K3(SKiiP 3 system). The eighth one is IEC 60068-1 (climate ) 40/125/56. The ninth one is UL recognized file no.E63532. At the same time, its gate driver also has many unique features: The first one is CMOS compatible inputs. The second one of 1013GB122-2DL is wide range power supply. The third one is intergrated circuitry to sense phase current, heat sink temperature and DC-bus voltage(option).The forth one is short circuit protection. The fifth one is over current protection . The fifth one is over voltage protection. The sixth one is power supply protected against under voltage. The seventh one is interlock of top/bottom switch. The eighth one is isolation by transformers. The ninth one is fibre optic interface(option for GB-types only). The tenth one is IEC 60068-1(climate)40/85/56. The eleventh one is UL recognized file no.242581.
There are some absolute maximum ratings about 1013GB122-2DL when Ts is 25 unless otherwise specified. IGBT: VCES is 1200 V . Vcc is 900 V when operating DC link voltage. VGES is ±20V. Ic is 1000 A when Ts is 25 and 750 A when Ts is 70. Inverse diode: IF is 880 A when Ts is 25 and 670 A when Ts is 70. IFSM is 6900 A when Tj is 150and tp is 10 ms ; sin.I2t(diode) is 238KA2S when Tj is 150and tp is 10 ms.Tj and Tstg are -40 to +150. Visol is 3000 V when rms, AC, 1 min, main terminals to heat sink. Iac-terminal is 400A (perAC terminal. rms, Ts is 70 , Tterminals is less than 115. IGBT: VCEsat is 2.3 V typ and 2.6 V max when Ic is 600 A and Tj is 25. VCEO is 1.1 V typ and 1.3 V max when Tj is 25 at terminal. ICES is 2.4 mA typ when VGE is 0 V and VCE is equal to VCES. Inverse diode: VTO is 1.1 V typ and 1.3 V max when Tj is 25. rT is 1.4V typand 1.5 V max when Tj is 25. Otherwise, there are some mechanical data. Mdc is 6 Nm min and 8 Nm max under the condition of DC terminals, SI units. Mac is 13 Nm min and 15 Nm max under the condition of AC terminals and SL units.W is 5.4kg typ under the conidtion of heat sink.
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