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1011LD300

SpecificationsPower DissipationDevice Dissipation @25 (Pd)1590 WVoltage and CurrentDrain-Source (VDSS) 75VGate-Source (VGS) ± 20VTemperaturesStorage Temperature -65 to +150Operating Junction Temperature +200DescriptionThe 1011LD300 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capab...

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SeekIC No. : 004207342 Detail

1011LD300: SpecificationsPower DissipationDevice Dissipation @25 (Pd)1590 WVoltage and CurrentDrain-Source (VDSS) 75VGate-Source (VGS) ± 20VTemperaturesStorage Temperature -65 to +150Operating Junction Tempera...

1011LD300 Data Sheet

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Part Number:
1011LD300
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Product Details

Description



Specifications

Power Dissipation
Device Dissipation @25 (Pd)                   1590 W
Voltage and Current
Drain-Source (VDSS)                                        75V
Gate-Source (VGS)                                       ± 20V
Temperatures
Storage Temperature                       -65 to +150
Operating Junction Temperature                 +200


Description

The 1011LD300 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 300 Wpk of RF power from 1030 to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.




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