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1011LD200

SpecificationsPower DissipationDevice Dissipation @25 (Pd) 700 WVoltage and CurrentDrain-Source (VDSS) 75VGate-Source (VGS) ± 20VTemperaturesStorage Temperature -65 to +150 Operating Junction Temperature+200 DescriptionThe 1011LD200 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capa...

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SeekIC No. : 004207341 Detail

1011LD200: SpecificationsPower DissipationDevice Dissipation @25 (Pd) 700 WVoltage and CurrentDrain-Source (VDSS) 75VGate-Source (VGS) ± 20VTemperaturesStorage Temperature -65 to +150 Operating Junction Temper...

1011LD200 Data Sheet

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Part Number:
1011LD200
Supply Ability:
5000

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Product Details

Description



Specifications

Power Dissipation
Device Dissipation @25  (Pd)                 700 W
Voltage and Current
Drain-Source (VDSS)                                     75V
Gate-Source (VGS)                                    ± 20V
Temperatures
Storage Temperature                   -65 to +150
Operating Junction Temperature            +200


Description

The 1011LD200 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 200 Wpk of RF power from 1030 to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces unction temperature, extends life.




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