1011LD110 Selling Leads, Price trend, 1011LD110 DataSheet download, circuit diagram from SeekIC.com

SpecificationsPower DissipationDevice Dissipation @25 (Pd) 300 WVoltage and CurrentDrain-Source (VDSS) 75VGate-Source (VGS) ± 20VTemperaturesStorage Temperature -65 to +150Operating Junction Temperature +200DescriptionThe 1011LD110 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capab...

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SeekIC No. : 004207340 Detail

1011LD110: SpecificationsPower DissipationDevice Dissipation @25 (Pd) 300 WVoltage and CurrentDrain-Source (VDSS) 75VGate-Source (VGS) ± 20VTemperaturesStorage Temperature -65 to +150Operating Junction Tempera...

1011LD110 Data Sheet

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Part Number:: 1011LD110
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/21

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Product Details

Description

Specifications

Power Dissipation
Device Dissipation @25 (Pd)         300 W
Voltage and Current
Drain-Source (VDSS)                            75V
Gate-Source (VGS)                           ± 20V

Temperatures
Storage Temperature           -65 to +150
Operating Junction Temperature     +200

Description

The 1011LD110 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110 Wpk of RF power from 1030 to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.

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1011LD110

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