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1011LD110

SpecificationsPower DissipationDevice Dissipation @25 (Pd) 300 WVoltage and CurrentDrain-Source (VDSS) 75VGate-Source (VGS) ± 20VTemperaturesStorage Temperature -65 to +150Operating Junction Temperature +200DescriptionThe 1011LD110 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capab...

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SeekIC No. : 004207340 Detail

1011LD110: SpecificationsPower DissipationDevice Dissipation @25 (Pd) 300 WVoltage and CurrentDrain-Source (VDSS) 75VGate-Source (VGS) ± 20VTemperaturesStorage Temperature -65 to +150Operating Junction Tempera...

1011LD110 Data Sheet

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Part Number:
1011LD110
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5000

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Product Details

Description



Specifications

Power Dissipation
Device Dissipation @25 (Pd)         300 W
Voltage and Current
Drain-Source (VDSS)                            75V
Gate-Source (VGS)                           ± 20V

Temperatures
Storage Temperature           -65 to +150
Operating Junction Temperature     +200


Description

The 1011LD110 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110 Wpk of RF power from 1030 to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.




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