100NF/25V

The 100NF/25V is designed as one kind of STripFET III power MOSFET with three points of features:(1)100% avalanche tested;(2)low threshold drive;(3)logic level device. And it can be used in switching application. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

The absolute maximum ratings of the 100NF/25V can be summarized as:(1)drain-source voltage (VGS=0):30 V;(2)drain-gate voltage (RGS=20 k):24 V;(3)gate-source voltage:± 16 V;(4)drain current (continuous) at Tc=25°C:100 A;(5)drain current (continuous) at Tc=100°C:100 A;(6)drain current (pulsed):400 A;(7)total dissipation at Tc=25°C:300 W;(8)derating factor:2 W/°C;(9)single pulse avalanche energy:1.9 J;(10)storage temperature:-55 to 175 °C;(11)max. operating junction temperature:-55 to 175 °C.

The thermal data of the 100NF/25V are:(1)thermal resistance junction-case max:0.5 °C/W;(2)thermal resistance junction-ambient max:62.5 °C/W;(3)maxi-mum lead temperature for soldering purpose:300 °C. If you want to know more information such as the electrical characteristics about the 100NF/25V, please download the datasheet in www.seekic.com or www.chinaicmart.com .