Series: -
Manufacturer: Vishay Semiconductors
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Reverse Recovery Time (trr): -
Capacitance @ Vr, F: -
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Packaging: Bulk
Mounting Type: Through Hole, Radial
Package / Case: PowerTab?, PowIRtab?
Supplier Device Package: PowIRtab?
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.04V @ 100A
Current - Reverse Leakage @ Vr: 300µA @ 100V
Features: · 175°C TJ operation
· High Frequency Operation
· Low forward voltage drop
· Continuous High Current operation
· Guard ring for enhanced ruggedness and long term
· reliabilitySpecifications
| Parameters |
100BGQ |
Units |
Conditions |
| IF(AV) Max. Average Forward Current |
100 |
A |
50% duty cycle @ TC = 100°C, rectangular wave form |
| IF(RMS) RMS Forward Current |
141 |
A |
TC = 95°C |
IFSM Max. Peak One Cycle Non-Repetitive
SurgeCurrent |
6300 |
A |
5s Sine or 3s Rect. pulse |
Following any rated
load condition and
with rated VRRM applied |
| 800 |
10ms Sine or 6ms Rect. pulse |
| EAS Non-RepetitiveAvalancheEnergy |
9 |
mJ |
TJ = 25 °C, IAS = 6 Amps, L = 2.0 mH |
| IAR Repetitive Avalanche Current |
2 |
A |
Current decaying linearly to zero in 1 sec
Frequency limited by TJ max. VA = 1.5 x VR typical |
DescriptionThis NEW Schottky rectifier 100BGQ100 has been optimized for low reverse leakage at high temperature
The proprietary barrier technology allows for reliable operation up to 175°C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems.
100BGQ100 Data Sheet
