10.0-18.0

Features: Integrated Mixer, LO Buffer and Output Amplifier8 dB Conversion Gain15 dB Image Rejection+17 dBm OIP3+6 dBm LO Drive Level-12 dBm LO Leakage Power100% On-Wafer RF and DC Testing100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +6.0 VDC Supply Cu...

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SeekIC No. : 004207019 Detail

10.0-18.0: Features: Integrated Mixer, LO Buffer and Output Amplifier8 dB Conversion Gain15 dB Image Rejection+17 dBm OIP3+6 dBm LO Drive Level-12 dBm LO Leakage Power100% On-Wafer RF and DC Testing100% Visual...

floor Price/Ceiling Price

Part Number:
10.0-18.0
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

Integrated Mixer, LO Buffer and Output Amplifier
8 dB Conversion Gain
15 dB Image Rejection
+17 dBm OIP3
+6 dBm LO Drive Level
-12 dBm LO Leakage Power
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010



Specifications

Supply Voltage (Vd) +6.0 VDC
Supply Current (Id1,2,3) 250,150,250 mA
Gate Bias Voltage (Vg) +0.3 VDC
Input Power (IF Pin) 0.0 dBm
Storage Temperature (Tstg) -65 to +165
Operating Temperature (Ta) -55 to MTTF Table1
Channel Temperature (Tch) MTTF Table1

(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.




Description

Mimix Broadband's 10.0-18.0 GHz GaAs MMIC transmitter provides +17 dBm output third order intercept and 15 dB image rejection across the band. 10.0-18.0 is an image reject, balanced mixer followed by a two stage output amplifier. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.




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