091060M

SpecificationsMaximum Power Dissipation @ 25................ 180 WattsMaximum Voltage and CurrentBVces Collector to Emitter Voltage....................... 65 VoltsBVebo Emitter to Base Voltage ...........................3.5VoltsIc Collector Current..............................................8 Am...

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SeekIC No. : 004206463 Detail

091060M: SpecificationsMaximum Power Dissipation @ 25................ 180 WattsMaximum Voltage and CurrentBVces Collector to Emitter Voltage....................... 65 VoltsBVebo Emitter to Base Voltage ........

floor Price/Ceiling Price

Part Number:
091060M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Specifications

Maximum Power Dissipation @ 25................    180     Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage....................... 65       Volts
BVebo Emitter to Base Voltage ...........................3.5       Volts
Ic Collector Current .............................................. 8       Amps
Maximum Temperatures
Storage Temperature....................... - 65 to + 200
Operating Junction Temperature ................+ 200  



Description

The 0910-60M is an internally matched, COMMON BASE transistor capable of providing 60 Watts of pulsed RF output power at 150 µs pulse width, 5% duty factor across the band 890 to 1000 MHz. This hermetically solder-sealed transistor is specifically designed for P-Band radar applications. It utilizes gold metallization to provide high reliability.




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