0910150M

Specifications Maximum Power Dissipation @ 25 400 Watts Maximum Voltage and CurrentBVces Collector to Emitter VoltageBVebo Emitter to Base VoltageIc Collector Current 65 Volts3.5 Volts12 Amps Maximum TemperaturesStorage TemperatureOperating Junction Temperature - 65 to + 200 + ...

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SeekIC No. : 004206461 Detail

0910150M: Specifications Maximum Power Dissipation @ 25 400 Watts Maximum Voltage and CurrentBVces Collector to Emitter VoltageBVebo Emitter to Base VoltageIc Collector Current 65 Volts3.5 Volts...

floor Price/Ceiling Price

Part Number:
0910150M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Specifications

Maximum Power Dissipation @ 25
400 Watts
Maximum Voltage and Current
BVces      Collector to Emitter Voltage
BVebo     Emitter to Base Voltage
Ic            Collector Current
65 Volts
3.5 Volts
12 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200
           + 200



Description

The 0910-150M is an internally matched, COMMON BASE transistor capable of providing 150 Watts of pulsed RF output power at 150 s pulse width, 5% duty factor across the band 890 to 1000 MHz. 0910150M is specifically designed for P-Band radar applications. It utilizes gold metallization to provide high reliability.




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