Specifications Maximum Power Dissipation @ 25 400 Watts Maximum Voltage and CurrentBVces Collector to Emitter VoltageBVebo Emitter to Base VoltageIc Collector Current 65 Volts3.5 Volts12 Amps Maximum TemperaturesStorage TemperatureOperating Junction Temperature - 65 to + 200 + ...
0910150M: Specifications Maximum Power Dissipation @ 25 400 Watts Maximum Voltage and CurrentBVces Collector to Emitter VoltageBVebo Emitter to Base VoltageIc Collector Current 65 Volts3.5 Volts...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
US $.56 - .56 / Piece
Headers & Wire Housings 20u AU over NI 76 CON
US $.56 - .86 / Piece
Circuit Board Hardware - PCB Short Stroke SMT .137
Maximum Power Dissipation @ 25 |
400 Watts |
Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current |
65 Volts 3.5 Volts 12 Amps |
Maximum Temperatures Storage Temperature Operating Junction Temperature |
- 65 to + 200 + 200 |
The 0910-150M is an internally matched, COMMON BASE transistor capable of providing 150 Watts of pulsed RF output power at 150 s pulse width, 5% duty factor across the band 890 to 1000 MHz. 0910150M is specifically designed for P-Band radar applications. It utilizes gold metallization to provide high reliability.