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0809LD30

SpecificationsPower DissipationDevice Dissipation @25°C (Pd) 110 WThermal Resistance (JC) 1.6°C/WVoltage and CurrentDrain-Source (VDSS) 65VGate-Source (VGS)±20VTemperaturesStorage Temperature -65 to +200°COperating Junction Temperature +200°CDescriptionThe 0809LD30 is a common source N-Channel e...

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0809LD30: SpecificationsPower DissipationDevice Dissipation @25°C (Pd) 110 WThermal Resistance (JC) 1.6°C/WVoltage and CurrentDrain-Source (VDSS) 65VGate-Source (VGS)±20VTemperaturesStorage Temperature -65 ...

0809LD30 Data Sheet

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Part Number:
0809LD30
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Power Dissipation
Device Dissipation @25°C (Pd)                      110 W
Thermal Resistance (JC)                           1.6°C/W
Voltage and Current
Drain-Source (VDSS)                                           65V
Gate-Source (VGS)                                          ±20V
Temperatures
Storage Temperature                      -65 to +200°C
Operating Junction Temperature               +200°C


Description

The 0809LD30 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness.




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