052N3S

The 052N3S is short for BSO052N03S which is designed as optiMOS2 power transistor.

The 052N3S has nine features. The first one is it would have fast switching MOSFET for SMPS. The second one is it would have optimized technology for notebook DC/DC. The third one is qualified according to JEDEC for target applications. The fourth one is it would be N-channel. The fifth one is logic level. The sixth one is it would have excellent gate charge x Rds(on) product (FOM). The seventh one is it would have very low on-resistance Rds(on). The eighth one is it would be avalanche rated. The ninth one is it would be dv/dt rated. That are all the main features above.

Some absolute maximum ratings have been concluded into several points as follow. The 052N3S countinuous drain current would be 17A for 10 secs and would be 14A for steady state at Ta=25°C and at Ta=70°C it would be 14A for 10 secs and would be 8.3A for steady state. Its pulsed drain current would be 68A. Its avalanche energy, single pulse would be 380mJ with condition of Id=17A and Rgs=25. Its gate source voltage would be +/-20V. Its power dissipation would be 2.5W for 10 secs and would be 1.56W for steady state. Its operating and storage temperature range would be from -55°C to 150°C. The last one is about its IEC climatic category; DIN IEC 68-1 which would be 55/150/56.

Also some electrical characteristics about 052N3S. Its drain to source breakdown voltage would be min 30V with condition of Vgs=0V and Id=1mA. Its gate threshold voltage would be min 1.2V and typ 1.6V and max 2V with condition of Vds=Vgs, Id=70uA. Its zero gate voltage drain current would be typ 0.1uA and max 1uA with condition of Vds=30V, Vgs=0V and Tj=25°C and if Tj=125°C it would be typ 10uA and max 100uA. And so on. If you have any question or suggestion or want to know more information about 052N3S, please contact us for details. Thank you!