Specifications Maximum Power Dissipation @ 251 800 Watts Maximum Voltage and Current BVcesBVeboIc Collector to Emitter VoltageEmitter to Base VoltageCollector Current 65 Volts3.5 Volts50 Amps Maximum Temperatures Storage TemperatureOperating Junction Temperature - 65 to + ...
0405-500L: Specifications Maximum Power Dissipation @ 251 800 Watts Maximum Voltage and Current BVcesBVeboIc Collector to Emitter VoltageEmitter to Base VoltageCollector Current 65 Volts3.5 Vol...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
US $.11 - .12 / Piece
Circuit Board Hardware - PCB PRESS FIT PIN RECPT
US $.33 - .33 / Piece
Circuit Board Hardware - PCB .082 PIN RECEPTACLE
US $.19 - .21 / Piece
Circuit Board Hardware - PCB 200u SN/PB OVER NI 34 CON
Maximum Power Dissipation @ 251 | 800 Watts | |
Maximum Voltage and Current | ||
BVces BVebo Ic |
Collector to Emitter Voltage Emitter to Base Voltage Collector Current |
65 Volts 3.5 Volts 50 Amps |
Maximum Temperatures | ||
Storage Temperature Operating Junction Temperature |
- 65 to + 200 + 200 |
The 0405-500L is an internally matched, COMMON EMITTER transistor capable of providing 500 Watts of pulsed RF output power in a push-pull configuration at one thousand and one hundred microsecond pulse width twenty six percent duty factor across the frequency band 400-450 MHz. This hermetically sealed transistor is specifically designed for medium pulse radar applications. The 0405-500L utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness.