0405-1000M Selling Leads, Price trend, 0405-1000M DataSheet download, circuit diagram from SeekIC.com

SpecificationsMaximum Power Dissipation @ 2511400 WattsMaximum Voltage and CurrentBVces Collector to Emitter Voltage 85 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 70 AmpsMaximum TemperaturesStorage Temperature - 65 to + 200Operating Junction Temperature + 200DescriptionThe 04...

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SeekIC No. : 004205683 Detail

0405-1000M: SpecificationsMaximum Power Dissipation @ 2511400 WattsMaximum Voltage and CurrentBVces Collector to Emitter Voltage 85 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 70 AmpsMaximu...

0405-1000M Data Sheet

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Part Number:: 0405-1000M
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/21

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Recent History
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0405-0-15-00-00-00-04-0 evaluate
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0405-0-15-01-34-27-04-0 evaluate
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Circuit Board Hardware - PCB 200u SN/PB OVER NI 34 CON

Product Details

Description

Specifications

Maximum Power Dissipation @ 25¹ 1400 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 85 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 70 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200
Operating Junction Temperature + 200

Description

The 0405-1000M is an internally matched, COMMON EMITTER transistor capable of providing 1000 Watts of pulsed RF output power in a push-pull configuration at three hundreds microsecond pulse width ten percent duty factor across the frequency band 400-450 MHz. This hermetically sealed transistor is specifically designed for medium pulse radar applications. The 0405-1000M utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness.

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0405-1000M

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