DescriptionThe 03P2J is designed for many switching applications, especially in Hybrid Integrated Circuits. The features of 03P2J are as follows: (1)world standard miniature package: SOT-89; (2)high anode to cathode voltage: VDRM, VRRM = 200V. The absolute maximum ratings of the 03P2J are: (1)non...
03P2J: DescriptionThe 03P2J is designed for many switching applications, especially in Hybrid Integrated Circuits. The features of 03P2J are as follows: (1)world standard miniature package: SOT-89; (2)high...
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The 03P2J is designed for many switching applications, especially in Hybrid Integrated Circuits. The features of 03P2J are as follows: (1)world standard miniature package: SOT-89; (2)high anode to cathode voltage: VDRM, VRRM = 200V.
The absolute maximum ratings of the 03P2J are: (1)non-repetitive peak revense voltage: 300V; (2)non-repetitive peak off-state voltage: 300V; (3)repetitive peak revense voltage: 200V; (4)repetitive peak off-state voltage: 200V; (5)average on-state current: 0.3A; (6)RMS on-state current: 0.47A; (7)surge on-state current: 6A; (8)peak gate power dissipation: 0.1W; (9)average gate power dissipation: 0.01W; (10)peak gate forward current: 0.1A; (11)peak gate revense voltage: 6V; (12)junction temperature: -55 to +125; (13)storage temperature: -55 to +150.
The following is about the electrical characteristics of 03P2J: (1)repetitive peak reverse current: 10A max at Tj = 25; (2)repetitive peak off-state current: 10A max at Tj = 25; (3)critical rate of rise of off-state voltage: 40V/s typical at VDM = 2/mVDRM, Tj = 125; (4)on-state voltage: 1.6V max at 1TM = 1A; (5)gate trigger current: 200A max at VDM = 6V, RL = 100; (6)gate trigger voltage: 0.8V max at VDM = 6V, RL = 100; (7)gate tnon-rigger voltage: 0.1V min at VDM = 1/2VDRM, Tj = 125; (8)holding current: 5mA max at VDM = 24V, ITM = 1A; (9)commutating turn-off time: 25s typical at ITM = 200mA, diT/dt = 15A/s; (10)thermal resistance: 65/W max at junction to ambient.