125_W_150_MHz_TMOS_FET_amplifier

Published:2009/7/23 22:59:00 Author:Jessie | From:SeekIC

This circuit uses an MRF174 TMOS FET, has a typical gain of 12 dB, and can survive operation into a 30:1 VSWR load at any phase angle with no damage. Notice that the output power can be reduced to loss than 1W continuously by driving the dc gate voltage negative (by adjusting R3). Figure 2-53B shows this performance feature.



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