MEMC pushes SOI wafers for FinFET over oxide

Published:2012/7/9 4:26:00 Author:Ecco From:SeekIC

MEMC Electronics Materials Inc. (St. Peters, Missouri), a silicon wafer supplier, has pushed an introduction of FOX-Si. It is a form of silicon-on-insulator (SOI) wafer to facilitate the creation of FinFETs with oxide dielectric isolation.

Intel Corp. has introduced FinFETs into 22-nm manufacturing node. Foundry chip makers had not been expected to introduce FinFETs until the 14-nm node. However, United Microelectronics Corp. (Hsinchu, Taiwan) has recently announced the licensing deal with IBM that includes FinFETs within a 20-nm process.

Anyway, it is difficult to produce conventional FinFETs in high volume. The use of SOI for FinFET production has been proposed as the next step for Intel and foundries wishing to introduce FinFETs. According to MEMC, an appropriate form of silicon-on-insulator (SOI) wafer can allow the production of controlled fin height and thereby deliver consistent channel width.

MEMC announced that its FOX-Si wafers are priced "competitively" but did not disclose the price. MEMC allows customers to customize wafers and choose the depth of silicon above the oxide to "dial-in" in the fin height they want.

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