ST, ST-Ericsson using SOI for mobile chips

Published:2012/3/13 2:00:00 Author:Ecco From:SeekIC

The ST-Ericsson NV has chosen planar fully depleted SOI (FD-SOI) technology for use with future mobile chips. The implementation of the NovaThor mobile application processor and modem on FD-SOI wafers supplied by Soitec (Bernin, France) enables as much as 35 percent lower power consumption at maximum performance. Soitec SA is a supplier of silicon-on-insulator (SOI) wafers.

NovaThor family has been developed using bulk CMOS at least until 28-nm CMOS. So it is thought that Soitec is announcing the use of FD-SOI for devices designed to be implemented in processes below 28-nm. Next-generation mobile consumer devices with STMicroelectronics on FD-SOI are able to deliver these benefits in a cost-effective manner, while allowing us to differentiate our solutions.

The use of fully-depleted SOI wafers increases the base wafer cost，but Soitec argues it allows the implementation of transistor technology that solves scaling, leakage and variability issues associated with shrinking CMOS technology from 28-nm with less complexity, thereby enhancing manufacturability and yield.

Joel Hartmann, STMicroelectronics assistant general manager of technology R&D said that “STMicroelectronics and its partners Leti, Soitec and IBM have invested several years of development in FD-SOI technology, and ST has recently demonstrated the strong differentiation of this technology versus conventional bulk CMOS, both for high-performance and low-power features on several IPs at 28-nm and below, This combination makes FD-SOI particularly suitable for wireless and tablet applications where it essentially provides the fully depleted transistor benefits of FinFETs on a planar conventional technology, while allowing advanced back bias techniques, which are not available with FinFETs.”

Arguments about the use of FinFETs and silicon-on-insulator as alternative means to minimize leakage currents in advanced process have run for some years. Intel is expected to introduce FinFETs in its 22-nm process technology, although production of processors on 22-nm has reportedly been pushed back to the middle of 2012.

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