Infineon Introduced the New Automotive 40V OptiMOS™ T2 power MOSFETs

Published:2011/12/25 23:48:00 Author:Phyllis From:SeekIC

Infineon Technologies has introduced the new automotive 40V OptiMOS™ T2 power MOSFETs that based on the combination of packaging technology and Infineon’s thin wafer process technology and offered high-performance specifications.

Because of specific requirements in terms of package geometry, die pad thickness, and chip size the diffusion soldering die attach approach is today only suitable for these three package types: TO-220, TO-262, and TO-263.

With the new MOSFET series, Infineon exceeds current RoHS (Restriction on Hazardous Substances) directives related to lead-based solder used to attach silicon chips to packages. Stricter ELV RoHS directives pending implementation after 2014 may require 100% lead-free packaging. The new Infineon devices allow customers to meet these stricter requirements.

The Infineon-patented lead-free die-attach uses a diffusion soldering approach, which allows improved electrical and thermal performance, manufacturability, and quality. By matching this die attach technology with Infineon’s thin wafer processes (60 µm compared to standard 175 µm), the company says this enables several improvements for power semiconductors:

The technology is environmentally friendly as no use of lead or other toxic material is involved. Through the combination of diffusion soldering die attach process and thin wafer technology the RDS(on) of the devices is significantly reduced.

Thermal resistance (RthJC) is improved by up to 40 to 50%, as the conventional lead-based soft solder material has poorer thermal conductivity and acts as a thermal barrier for the heat generated on the junction of the MOSFET.

Further benefits are a better manufacturability because there is no solder bleed-out and no chip tiltness as well as tighter RDS(on) and RthJC distribution, and finally an improved reliability and quality due to reduced electro-mechanical stress within the product.

The IPB160N04S4-02D provides 160A and offers a RDS(on) of only 2.0 mΩ as well as a RthJC of 0.9 K/W. The on-resistance is about 20% less compared to relate devices using standard lead-based die attach soldering. In addition, the patented diffusion soldering technique results in a reduced “chip-to-leadframe” thermal resistance.

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